X-ray scattering study of gan nanowires grown on ti/al2o3 by molecular beam epitaxy

HIGHLIGHTS

• who: Paul-Drude- and colleagues from the Systems and Microtechnology (ISOM) and Materials Science Department, Universidad Politeu0301cnica de Madrid, AvenidaAustria have published the Article: X-ray scattering study of GaN nanowires grown on Ti/Al2O3 by molecular beam epitaxy, in the Journal: (JOURNAL)
• what: As a prerequisite for the GISAXS study, the authors performed XRD measurements with the primary purpose of determining these ranges from the widths of the respective reflections on sample rotation. The samples studied in this paper were cut from the same wafers as the samples studied by Calabrese et_al . While the . . .
  

   

  

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