HIGHLIGHTS
- What: During this period, the research focus of GaN materials gradually shifted to the development and application of power electronic devices and RF devices.
- Who: Hengjie Gao from the International School of Engineering, Xi`an University of Technology, Xi`an, China have published the research: Advancements and future prospects of Gallium Nitride (GaN) in semiconductor technology, in the Journal: (JOURNAL)
- Future: At present GaN is still a research hotspot in the field of semiconductor materials and there is more potential to be tapped in the future. Future research trajectories are oriented towards developing . . .
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