Characterization of m-gan and a-gan crystallographic planes after being chemically etched in tmah solution

HIGHLIGHTS

• who: Nedal Al Taradeh et al. from the Laboratoire Nanotechnologies Nanosystèmes, CNRS UMI-3463, IT, Université Sherbrooke, University Côte d'Azur, CNRS (Centre National la Recherche Scientifique), CRHEA (Centre Recherche have published the Article: Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution, in the Journal: Energies 2021, 14, x FOR PEER REVIEW of /2021/
• what: The aim of this paper is to investigate one of the most critical steps in the fabrication process of vertical GaN FinFET transistors, which is the etching of the channel . . .
  

   

  

  If you want to have access to all the content you need to log in!

  Thanks :)

  Username or Email

  Password

  Remember me

  Lost your password?

  If you don't have an account, you can create one here.