HIGHLIGHTS
- who: Pavel Kirilenko et al. from the Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia have published the paper: Performance Improvement of InGaN-Based LEDs via a Current-Blocking Region Prepared via Hydrogen Passivation, in the Journal: Crystals 2022, 12, 1733. of /2022/
- what: The authors report p-GaN plasma used to create regions (CBRs) in InGaN-based green LEDs with standard dimensions of 280 u00d7 650 u00b5m2.
- how: In this experiment p-GaN selective passivation via hydrogen plasma was utilized to improve the external quantum efficiency of . . .
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