HIGHLIGHTS
- who: Submitted and colleagues from the Laboratory of Microelectronics Devices and Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China , University of Chinese Academy of Sciences, Beijing, China , Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, China , State Key Laboratory of Crystal Materials, Key Laboratory of Functional Crystal Materials and Device, Shandong University, Jinan, China ( Received have published the Article: C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3, in the Journal: (JOURNAL) of 18/06/2018
SUMMARY
It has a higher . . .
If you want to have access to all the content you need to log in!
Thanks :)
If you don't have an account, you can create one here.