Excellent rectifying properties of the n-3c-sic/p-si heterojunction subjected to high temperature annealing for electronics, mems, and led applications

HIGHLIGHTS

• who: Philip Tanner from the (UNIVERSITY) have published the article: Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications, in the Journal: (JOURNAL) of 18/09/2017
• future: Future investigations will focus on determining the nature and cause of these localised defects.

SUMMARY

Received Published: xx xx xxxx Scientific REPOrts | 7:17734 | 3C-SiC Epilayers and Electrical Test Structures In samples described as blanket films, all carbonization and initial SiC deposition was performed at or below 1000 °C . . .

 



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