HIGHLIGHTS
- What: The authors demonstrate the effect different temperatures during have on the performance and discuss excess phase noise observed caused by surface oxidization of exposed Si. As the work presented is still in progress the authors also discuss further improvements planned for the near future. The authors report on the efforts to demonstrate proximity effectbased TiN/Ti/TiN triple layers as further alternative for UVOIR MKIDs. The authors show that nanofabrication steps that are standard and highly tested in CMOS fabrication can still lead to unexpected and detrimental effects when used to fabricate MKIDs.
- Who . . .
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