HIGHLIGHTS
- who: Philip Tanner from the (UNIVERSITY) have published the article: Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications, in the Journal: (JOURNAL) of 18/09/2017
- future: Future investigations will focus on determining the nature and cause of these localised defects.
SUMMARY
Received Published: xx xx xxxx Scientific REPOrts | 7:17734 | 3C-SiC Epilayers and Electrical Test Structures In samples described as blanket films, all carbonization and initial SiC deposition was performed at or below 1000 °C . . .
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